HSEM series electromagnet Hall effect test system consists of electromagnet, Hall tester, controller, sample temperature options and other components. According to the selection of different configurations up to ± 1.5T magnetic field, 10K sample minimum temperature, 1273K sample maximum temperature and other performance. With a wide range of magnetic field, temperature zone and other characteristics. Can meet the customer in different temperatures or different magnetic fields on the material resistivity, carrier concentration, carrier type, Hall coefficient, electron mobility and other parameters to be measured.

System features:

- With continuously variable magnetic field environment, optional ± 0.8T or ± 1.5T two configurations
- With a wide range of temperature options, including: room temperature, liquid nitrogen single point, 10K-400K closed loop low-temperature options, room temperature-1273K high-temperature options
- Mobility range: 0.01-10^6
- Measurable sample resistance range: 10mΩ-100GΩ
- Carrier concentration: 8 × 102 to 8 × 1023 cm-3
- Room temperature shielding box provides a room temperature testing environment for samples. A variety of room temperature sample cards are provided to meet the Hall testing of samples of various specifications.
- The cryostat and room temperature shielding box can be quickly switched by the slide, which can quickly switch samples or change the sample environment to improve the efficiency of sample change.

Test Material:

- Thermoelectric materials: bismuth telluride, lead telluride, silicon germanium alloy, etc.
- Photovoltaic materials/solar cells: (A silicon (monocrystalline silicon, amorphous silicon) CIGS (copper indium gallium selenide), cadmium telluride, chalcogenide, etc.)
- Organic Materials: (OFET, OLED)
- Transparent Conductive Metal Oxide TCO: (ITO, AZO, ZnOIGZO (Indium Gallium Zinc Oxide), etc.)
- Semiconductor materials: SiGe, InAs, SiC, InGaAs, GaN, SiC, InP, ZnO, Ga2O3, etc.
- Two-dimensional materials: graphene, BN, MoS2